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STSJ80N4LLF3
N-channel 40V - 0.0042 - 18A - PowerSO-8TM STripFETTMIII Power MOSFET for DC-DC conversion
General features
Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005 ID 18A(1)
1. This value is rated according to Rthj-pcb
Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance
PowerSO-8
Description
This series of product utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.
Internal schematic diagram
Applications
Switching application
DRAIN CONTACT ALSO ON THE BACKSIDE
Order codes
Part number STSJ80N4LLF3 Marking 80N4LLPackage PowerSO-8 Packaging Tape & reel
November 2006
Rev 3
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Contents
STSJ80N4LLF3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STSJ80N4LLF3
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS VGS
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Total dissipation at TC = 25C Maximum operating junction temperature Storage temperature Value 40 16 18 80 18 50 72 70 3 -55 to 150 Unit V V V A A A A W W C
ID (2) ID ID
(3) (2) (4)
IDM
Ptot(2) Ptot(3) Tj Tstg
1. Guaranteed for test time < 15ms 2. This value is rated according to Rthj-c 3. This value is rated according to Rthj-pcb 4. Pulse with limited by safe operating area
Table 2.
Symbol Rthj-c Rthj-pcb
(1)
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 1.8 42 Unit C/W C/W
1. When mounted on 1 inch FR-4 board, 2oz Cu (t<10sec.)
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Electrical characteristics
STSJ80N4LLF3
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS = 0 VDS = 40V, TC = 25C VDS = 40V, TC = 125C VGS = 16V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VGS = 4.5V, ID = 9A 1 0.0042 0.005 0.005 0.007 Min. 40 10 100 200 Typ. Max. Unit V A A nA V
Table 4.
Symbol Ciss Coss Crss Qg Qgs Qgd RG
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 2530 574 29 21.5 6.9 8.2 1 3 28 Max. Unit pF pF pF
VDS = 25V, f = 1MHz, VGS = 0 VDD = 20V, ID = 18A VGS = 4.5V (see Figure 13) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain
nC nC nC
Gate input resistance
5
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STSJ80N4LLF3
Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 20V, ID = 9A RG = 4.7 , VGS = 10V (see Figure 15) VDD = 20V, ID = 9A RG = 4.7 , VGS = 10V (see Figure 15) Min. Typ. 17 25 62 9 Max. Unit ns ns ns ns
Table 6.
Symbol ISD ISDM VSD(1) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A , VGS = 0 ISD = 18A, di/dt = 100A/s VDD = 30V, Tj = 150C (see Figure 14) 43 64 3 Test conditions Min. Typ. Max. 18 72 1.2 Unit A A V ns nC A
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STSJ80N4LLF3
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
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STSJ80N4LLF3 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STSJ80N4LLF3
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STSJ80N4LLF3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STSJ80N4LLF3
PowerSO-8TM MECHANICAL DATA
mm. MIN. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 2.79 3.8 0.4 4.0 1.27 0.6 8 (max.) 0.14 0.015 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 0.188 0.228 0.050 0.150 0.110 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
DIM. A a1 a2 a3 b b1 C c1 D E e e3 e4 F L M S
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STSJ80N4LLF3
Revision history
5
Revision history
Table 7.
Date 13-May-2005 23-Jun-2006 22-Nov-2006
Revision history
Revision 1 2 3 Initial release. New template, complete version Corrected part number Changes
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STSJ80N4LLF3
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